Low-temperature, surface-compliant wafer bonding using sub-micron gold particles for wafer-level MEMS packaging

Hiroyuki Ishida, Toshinori Ogashiwa, Yukio Kanehira, Shin Ito, Takuya Yazaki, Jun Mizuno

研究成果: Conference contribution

8 被引用数 (Scopus)

抄録

Low-temperature wafer bonding using sub-micron gold particles was investigated. For more flexible bonding pattern deposition, wafer-level pattern transfer method has been developed to enable patterning on fragile structures such as MEMS devices. Sub-micron Au particle patterns with a width of 20 μm-60 μm and a height around 20 μm were formed on 100mm-diameter glass wafers by means of wafer-level processing using photolithography and a slurry-filling technique, and then successfully transferred onto Si wafers in ambient atmosphere at a temperature of 150°C and an applied pressure of 20 MPa-30 MPa. Finally, wafer bonding was performed at 200°C, 100 MPa and confirmed a sufficient tensile strength of 45.8 MPa. Compression deformation measurement was performed and the performance on a-few-μm surface roughness absorption was demonstrated. A feasibility of further reduction of bonding temperature has been suggested by showing sintering behavior of smaller-sized Au particles at 150°C.

本文言語English
ホスト出版物のタイトル2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012
ページ1140-1145
ページ数6
DOI
出版ステータスPublished - 2012 10 4
イベント2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012 - San Diego, CA, United States
継続期間: 2012 5 292012 6 1

出版物シリーズ

名前Proceedings - Electronic Components and Technology Conference
ISSN(印刷版)0569-5503

Conference

Conference2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012
国/地域United States
CitySan Diego, CA
Period12/5/2912/6/1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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