Low-Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD

Jin Wei*, Hiroshi Kawarada, Jun Ichi Suzuki, Akio Hiraki

*この研究の対応する著者

研究成果: Article査読

29 被引用数 (Scopus)

抄録

At a low temperature of 500°C, we have formed diamond films on Al substrates at 0.1 Torr using a magneto-microwave plasma CVD system. Since diamond can be formed at the low pressure of 0.1 Torr, the important parameters for diamond formation such as the plasma density during the diamond deposition can be measured and is found to be the highest (2.1×1011cm-3) at ECR condition. Above 1×1011cm-3, using a (CH4+CO2)/H2mixture, which is a suitable reaction gas for low-temperature diamond formation, high-quality diamond films have been obtained at temperatures as low as 500°C and at low pressure (0.1 Torr) on Al.

本文言語English
ページ(範囲)L1483-L1485
ジャーナルJapanese journal of applied physics
29
8
DOI
出版ステータスPublished - 1990 8
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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