Low-temperature thermal conductivity of heavily doped p-type semiconductors

T. Sota*, K. Suzuki, D. Fortier

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

A theoretical and experimental investigation of the low-temperature thermal conductivity of heavily doped p-type semiconductors has been carried out. The concentration dependence of the thermal conductivity for GaSb and Si obtained here is found to be similar to that for other heavily doped p-type semiconductors. Calculations of the thermal conductivity for various p-type semiconductors including GaSb and Si have been done by using the expression for the phonon relaxation rate obtained in the authors' previous paper (see ibid. vol.17, p.2661 (1984)). They can semiquantitatively explain the thermal conductivity of semiconductors with the large spin-orbit splitting. It is shown that the essential features of the concentration dependence of the thermal conductivity are due to the concentration dependence of the shear terms arising from a multiband structure of the valence bands and of the cut-off frequency in the hole-phonon interaction.

本文言語English
論文番号006
ページ(範囲)5935-5944
ページ数10
ジャーナルJournal of Physics C: Solid State Physics
17
33
DOI
出版ステータスPublished - 1984 12 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 工学(全般)
  • 物理学および天文学(全般)

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