Low-temperature transport properties of holes introduced by ionic liquid gating in hydrogen-terminated diamond surfaces

Takahide Yamaguchi, Eiichiro Watanabe, Hirotaka Osato, Daiju Tsuya, Keita Deguchi, Tohru Watanabe, Hiroyuki Takeya, Yoshihiko Takano, Shinichiro Kurihara, Hiroshi Kawarada

研究成果: Article査読

26 被引用数 (Scopus)

抄録

The surface conductivity of (111)- and (100)-oriented hydrogen-terminated diamonds was investigated at low temperatures for different carrier densities. The carrier density was controlled in a wide range in an electric doublelayer transistor configuration using ionic liquids. As the carrier density was increased, the temperature dependences of sheet resistance and mobility changed from semiconducting to metallic ones: the sheet resistance and mobility for the (111) surface were nearly independent of temperature for a sheet carrier density of ̃4 × 1013 cm-2, indicating metallic carrier transport. It was also found that the interface capacitance, determined from the gate voltage dependence of the Hall carrier density, depended significantly on the crystal orientation.

本文言語English
論文番号074718
ジャーナルjournal of the physical society of japan
82
7
DOI
出版ステータスPublished - 2013 7月
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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