Low-threshold-current distributed-feedback InGaAsP/InP CW lasers

S. Akiba; K. Utaka; K. Sakai; Y. Matsushima

doi:10.1049/el:19820053

Low-threshold-current distributed-feedback InGaAsP/InP CW lasers

S. Akiba, K. Utaka, K. Sakai, Y. Matsushima

研究成果: Article › 査読

32 被引用数 (Scopus)

抄録

Distributed-feedback buried-heterostructure InGaAsP/lnP lasers with room temperature CW threshold current as low as 50 mA, corresponding to a current density of 2-3 kA/cm₂, are presented. CW operation in the temperature range from −20°C to 58°C was confirmed.

本文言語	English
ページ（範囲）	77-78
ページ数	2
ジャーナル	Electronics Letters
巻	18
号	2
DOI	https://doi.org/10.1049/el:19820053
出版ステータス	Published - 1982 1 21
外部発表	はい

ASJC Scopus subject areas

Electrical and Electronic Engineering

文献へのアクセス

10.1049/el:19820053

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引用スタイル

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title = "Low-threshold-current distributed-feedback InGaAsP/InP CW lasers",

abstract = "Distributed-feedback buried-heterostructure InGaAsP/lnP lasers with room temperature CW threshold current as low as 50 mA, corresponding to a current density of 2-3 kA/cm2, are presented. CW operation in the temperature range from −20°C to 58°C was confirmed.",

keywords = "Lasers, Semiconductor lasers",

author = "S. Akiba and K. Utaka and K. Sakai and Y. Matsushima",

year = "1982",

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AU - Akiba, S.

AU - Utaka, K.

AU - Sakai, K.

AU - Matsushima, Y.

PY - 1982/1/21

Y1 - 1982/1/21

N2 - Distributed-feedback buried-heterostructure InGaAsP/lnP lasers with room temperature CW threshold current as low as 50 mA, corresponding to a current density of 2-3 kA/cm2, are presented. CW operation in the temperature range from −20°C to 58°C was confirmed.

AB - Distributed-feedback buried-heterostructure InGaAsP/lnP lasers with room temperature CW threshold current as low as 50 mA, corresponding to a current density of 2-3 kA/cm2, are presented. CW operation in the temperature range from −20°C to 58°C was confirmed.

KW - Lasers

KW - Semiconductor lasers

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