LSI on-chip optical interconnection with Si nano-photonics

Junichi Fujikata*, Kenichi Nishi, Akiko Gomyo, Jun Ushida, Tsutomu Ishi, Hiroaki Yukawa, Daisuke Okamoto, Masafumi Nakada, Takanori Shimizu, Masao Kinoshita, Koichi Nose, Masayuki Mizuno, Tai Tsuchizawa, Toshifumi Watanabe, Koji Yamada, Seiichi Itabashi, Keishi Ohashi


研究成果: Article査読

24 被引用数 (Scopus)


LSI on-chip optical interconnections are discussed from the viewpoint of a comparison between optical and electrical interconnections. Based on a practical prediction of our optical device development, optical interconnects will have an advantage over electrical interconnects within a chip that has an interconnect lengthless than about 10mm at the hp32-22nm technology node. Fundamental optical devices and components used in interconnections have also been introduced that are small enough to be placed on top of a Si LSI and that can be fabricated using methodsc ompatible with CMOS processes. A SiON waveguide showed a low propagation loss around 0 .3dB/cm at a wavelength of 850nm, and excellent branching characteristics were achieved for MMI (multimode interference) branch structures. A Si nano-photodiodse howed highly enhanced speed and efficiency with a surface plasmon antenna. By combining our Si nano-photonic devices with the advanced TIA-less optical clock distribution circuits, clock distribution above 10GHz can be achieved with a small footprint on an LSI chip.

ジャーナルIEICE Transactions on Electronics
出版ステータスPublished - 2008 2

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学


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