Luminescence energy shift and carrier lifetime change dependence on carrier density in In0.12Ga0.88N/In0.03Ga0.97N quantum wells

Takamasa Kuroda*, Atsushi Tackeuchi, Takayuki Sota

*この研究の対応する著者

研究成果: Article査読

51 被引用数 (Scopus)

抄録

To clarify the carrier density dependence of carrier lifetime and luminescence energy, we have performed a systematic study of time-resolved photoluminescence (PL) measurements of In0.12Ga0.88N/In0.03Ga0.97N multiple quantum wells for various carrier density. The carrier recombination rate and the PL energy, for the carrier density below 1.5× 1018cm-3, are found to decrease nonlinearly with the decrease of the carrier density, although the carrier lifetime is constant and the PL energy shifts linearly for carrier density above this value. We show that the energy shift for the small carrier density and the change in the carrier lifetime are well explained by the free carrier screening effect which compensates the internal electric field. The linear energy shift for the high carrier density is attributed to the band-filling effect.

本文言語English
ページ(範囲)3753-3755
ページ数3
ジャーナルApplied Physics Letters
76
25
DOI
出版ステータスPublished - 2000 6 19

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Luminescence energy shift and carrier lifetime change dependence on carrier density in In<sub>0.12</sub>Ga<sub>0.88</sub>N/In<sub>0.03</sub>Ga<sub>0.97</sub>N quantum wells」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル