Luminescence spectra from InGaN multiquantum wells heavily doped with Si

T. Deguchi, A. Shikanai, K. Torii, T. Sota, S. Chichibu, S. Nakamura

研究成果: Article査読

85 被引用数 (Scopus)

抄録

A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra.

本文言語English
ページ(範囲)3329-3331
ページ数3
ジャーナルApplied Physics Letters
72
25
DOI
出版ステータスPublished - 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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