Luminescences from localized states in InGaN epilayers

S. Chichibu*, T. Azuhata, T. Sota, S. Nakamura

*この研究の対応する著者

研究成果: Article査読

418 被引用数 (Scopus)

抄録

Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1-xN (x<0.1) was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states.

本文言語English
ページ(範囲)2822-2824
ページ数3
ジャーナルApplied Physics Letters
70
21
DOI
出版ステータスPublished - 1997 5 26

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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