Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs

Koji Onomitsu*, Takehito Okabe, Toshiki Makimoto, Hisao Saito, Manfred Ramsteiner, Hai Jun Zhu, Atsushi Kawaharazuka, Klaus Ploog, Yoshiji Horikoshi

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs have been investigated for nitrogen 5-doped samples grown on (001) GaAs substrates. The excitons bound to nitrogen atom pairs produce a number of photoluminescence lines. However, these lines are much fewer than those observed in uniformly nitrogen-doped samples because of the limited spacing between two-dimensionally distributed nitrogen atoms. Among these lines, those appearing at 1.488, 1.476, and 1.428 eV are the most dominant. In this study, the characteristics of these dominant lines are investigated by an applying external field. The observed phenomena are explained by assuming that there is a continuous flow of excitons from a lower to a higher binding energy state under continuous excitation. Each photoluminescence line is found to split into two or more lines without applying an external field. The lines show a further split under a magnetic field and are finally quenched when the magnetic field is increased. The photoluminescence intensity of each line is modulated by the localization of excitons by a magnetic field and by the delocalization by an electric field.

本文言語English
ページ(範囲)L756-L758
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
43
6 B
DOI
出版ステータスPublished - 2004 6月 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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