Magnetic tunnel junctions with a rock-salt-type Mg1-xTixO barrier for low resistance area product

Ikhtiar, S. Kasai, P. H. Cheng, T. Ohkubo, Y. K. Takahashi, T. Furubayashi, K. Hono

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Ti-doped MgO (MTO) barriers were examined for polycrystalline magnetic tunnel junctions (MTJs) in combination with CoFeB ferromagnetic electrodes. The high tunneling magnetoresistance (TMR) ratio up to 240% and 160% was observed for the MTJs with Mg0.95Ti0.05O and Mg0.9Ti0.1O barriers after annealing at 450 °C. This high TMR ratio implies the presence of coherent tunneling. For a given thickness, MTJs with the MTO barriers were confirmed to have lower resistance-area product (RA) compared to those with the MgO barriers, suggesting the intrinsically lower barrier height of the MTO barriers. The MTO-based MTJs exhibit higher TMR ratio than those of the MgO-based MTJs for the RA range lower than 5 Ω μm2 as a consequence of thicker barriers and better wettability. This work has demonstrated the potential of the MTO barriers for low-RA MTJs.

本文言語English
論文番号242416
ジャーナルApplied Physics Letters
108
24
DOI
出版ステータスPublished - 2016 6月 13
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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