Magnetoresistance in a doped Mott-Hubbard system: R TiO3

T. Ito, Y. Shimada, T. Katsufuji

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We studied the magnetoresistance of RTiO3 (R=Pr and Ce) with offstoichiometry as a doped Mott-Hubbard system and found positive magnetoresistance proportional to the absolute value of the magnetic field in the antiferromagnetic phase of both insulating and metallic samples. This result indicates that not only the coherent state that appears with doping and is responsible for the metallic conduction, but also the incoherent state of the Mott-Hubbard insulator is affected by the spin configuration.

本文言語English
論文番号024411
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
91
2
DOI
出版ステータスPublished - 2015 1 12

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

フィンガープリント

「Magnetoresistance in a doped Mott-Hubbard system: R TiO3」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル