Analytical techniques of mass- and electron-spectroscopy were applied to the observation of lithography by synchrotron radiation (SR). During the exposure of positive resist to SR, the tendency of side-chain components easily dissociating was shown by mass spectroscopy. In-situ analysis with electron spectroscopy showed that the height of a peak appearing at low energy increased during the exposure when the power density of SR was high. This increase was closely related to the reduction in the film thickness by SR due to the dissociation of constituent molecules of the resist.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 1983|
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