MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Taizo Nakasu, Wei Che Sun, Sotaro Yamashita, Takayuki Aiba, Kosuke Taguri, Masakazu Kobayashi, Toshiaki Asahi, Hiroyoshi Togo

研究成果: Article査読

9 被引用数 (Scopus)

抄録

ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.

本文言語English
ページ(範囲)1182-1185
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
11
7-8
DOI
出版ステータスPublished - 2014 7

ASJC Scopus subject areas

  • 凝縮系物理学

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