MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

D. C. Grillo, W. Xie, M. Kobayashi, R. L. Gunshor, G. C. Hua, N. Otsuka, H. Jeon, J. Ding, A. V. Nurmikko

研究成果: Article

7 引用 (Scopus)

抜粋

The use of a nitrogen radio frequency plasma source together with an appropriate quantum well configuration have recently resulted in the successful realization of p-type ZnSe by molecular beam epitaxy. This has enabled a variety of pn heterojunction based devices to be built including the first semiconductor injection lasers operating in the blue/green portion of the spectrum first reported by 3M and the Brown/Purdue group. In this paper, we discuss two lattice matched multiple quantum well structures that produce laser emission in the blue and blue/green portion of the spectrum.

元の言語English
ページ(範囲)441-444
ページ数4
ジャーナルJournal of Electronic Materials
22
発行部数5
DOI
出版物ステータスPublished - 1993 5 1

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

これを引用

Grillo, D. C., Xie, W., Kobayashi, M., Gunshor, R. L., Hua, G. C., Otsuka, N., Jeon, H., Ding, J., & Nurmikko, A. V. (1993). MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers. Journal of Electronic Materials, 22(5), 441-444. https://doi.org/10.1007/BF02661610