抄録
Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10-3.
本文言語 | English |
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ページ(範囲) | 1221-1224 |
ページ数 | 4 |
ジャーナル | Materials Science Forum |
巻 | 264-268 |
号 | PART 2 |
DOI | |
出版ステータス | Published - 1998 |
外部発表 | はい |
ASJC Scopus subject areas
- 材料科学(全般)
- 凝縮系物理学
- 材料力学
- 機械工学