MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures

A. Yoshikawa, Z. Qin, H. Nagano, Y. Sugure, A. Jia, M. Kobayashi, Y. Kato, K. Takahashi

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10-3.

本文言語English
ページ(範囲)1221-1224
ページ数4
ジャーナルMaterials Science Forum
264-268
PART 2
DOI
出版ステータスPublished - 1998
外部発表はい

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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