TY - JOUR
T1 - MBE growth of GaN on MgO substrate
AU - Suzuki, Ryotaro
AU - Kawaharazuka, Atsushi
AU - Horikoshi, Yoshiji
PY - 2007/4
Y1 - 2007/4
N2 - We grow GaN on MgO substrate by plasma-assisted molecular beam epitaxy (MBE). It is revealed that hexagonal GaN grows on (1 1 1) MgO substrate and cubic GaN grows on (0 0 1) MgO substrate according to the symmetry of the substrates. Mixture of hexagonal phase into cubic GaN is found to be formed in the growth on (0 0 1) MgO, and is investigated by reciprocal space mapping. We obtained GaN epitaxial films with flat surface morphology and good crystalline quality on (1 1 1) MgO substrate.
AB - We grow GaN on MgO substrate by plasma-assisted molecular beam epitaxy (MBE). It is revealed that hexagonal GaN grows on (1 1 1) MgO substrate and cubic GaN grows on (0 0 1) MgO substrate according to the symmetry of the substrates. Mixture of hexagonal phase into cubic GaN is found to be formed in the growth on (0 0 1) MgO, and is investigated by reciprocal space mapping. We obtained GaN epitaxial films with flat surface morphology and good crystalline quality on (1 1 1) MgO substrate.
KW - A1. Crystal structure
KW - A1. Photoluminescence
KW - A1. X-ray diffraction
KW - A3. Molecular beam epitaxy
KW - B1. Nitrides
KW - B2. Semiconducting gallium compounds
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U2 - 10.1016/j.jcrysgro.2006.11.095
DO - 10.1016/j.jcrysgro.2006.11.095
M3 - Article
AN - SCOPUS:33947329150
VL - 301-302
SP - 478
EP - 481
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - SPEC. ISS.
ER -