MBE growth of InAs/AlInAs strained-layer multi quantum wells for optical device applications

Yuichi Matsushima*, Hiroshi Kato, Katsuyuki Utaka, Kazuo Sakai

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

InAs/Al0.48In0.52As strained-layer single quantum wells and strained-layer multi quantum wells have been grown by molecular beam epitaxy (MBE) on (100)-InP substrates. Although there is highly biaxial compressive strain in this material, high-crystalline quality without misfit dislocations is demonstrated by transmission electron microscopy (TEM) and low temperature photoluminescence (PL) measurements. PL peaks have been successfully observed from the MQWs with well width Lz of 9-40 Å. As for the sample with Lz = 9 Å, a large energy shift of 750 meV from the band-gap of bulk InAs was confirmed. A laser diode with InAs/AlInAs MQW active layer was also fabricated and the stimulated emission at 1.15 μm wavelength was confirmed at 77 K for the first time.

本文言語English
ページ(範囲)210-214
ページ数5
ジャーナルJournal of Crystal Growth
95
1-4
DOI
出版ステータスPublished - 1989 2月 2
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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