MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source

A. W. Jia*, T. Yamada, M. Kobayashi, A. Yoshikawa

*この研究の対応する著者

研究成果査読

抄録

We report on the molecular beam epitaxial (MBE) growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. The growth temperatures used arranged from 180 to 310°C. The valved-cracker cell with three independently controllable heaters is used for the S source. The epitaxial layers were grown using thermally cracked S source at 200, 500 and 900°C, and the film quality was characterized by X-ray diffraction and photoluminescence.

本文言語English
ページ(範囲)403-406
ページ数4
ジャーナルMaterials Science Forum
182-184
DOI
出版ステータスPublished - 1995
外部発表はい
イベントProceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors - Linz, Austria
継続期間: 1994 9 261994 9 28

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル