TY - JOUR
T1 - MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source
AU - Jia, A. W.
AU - Yamada, T.
AU - Kobayashi, M.
AU - Yoshikawa, A.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1995
Y1 - 1995
N2 - We report on the molecular beam epitaxial (MBE) growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. The growth temperatures used arranged from 180 to 310°C. The valved-cracker cell with three independently controllable heaters is used for the S source. The epitaxial layers were grown using thermally cracked S source at 200, 500 and 900°C, and the film quality was characterized by X-ray diffraction and photoluminescence.
AB - We report on the molecular beam epitaxial (MBE) growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. The growth temperatures used arranged from 180 to 310°C. The valved-cracker cell with three independently controllable heaters is used for the S source. The epitaxial layers were grown using thermally cracked S source at 200, 500 and 900°C, and the film quality was characterized by X-ray diffraction and photoluminescence.
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U2 - 10.4028/www.scientific.net/msf.182-184.403
DO - 10.4028/www.scientific.net/msf.182-184.403
M3 - Conference article
AN - SCOPUS:0029237080
SN - 0255-5476
VL - 182-184
SP - 403
EP - 406
JO - Materials Science Forum
JF - Materials Science Forum
T2 - Proceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors
Y2 - 26 September 1994 through 28 September 1994
ER -