MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source

A. W. Jia, T. Yamada, M. Kobayashi, A. Yoshikawa

研究成果: Conference article査読

抄録

We report on the molecular beam epitaxial (MBE) growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. The growth temperatures used arranged from 180 to 310°C. The valved-cracker cell with three independently controllable heaters is used for the S source. The epitaxial layers were grown using thermally cracked S source at 200, 500 and 900°C, and the film quality was characterized by X-ray diffraction and photoluminescence.

本文言語English
ページ(範囲)403-406
ページ数4
ジャーナルMaterials Science Forum
182-184
DOI
出版ステータスPublished - 1995
外部発表はい
イベントProceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors - Linz, Austria
継続期間: 1994 9 261994 9 28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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