MBE growth of ZnSe/MgCdS and ZnCdS/MgCdS superlattices for UV-A sensors

J. Ueno*, K. Ogura, A. Ichiba, S. Katsuta, M. Kobayashi, K. Onomitsu, Y. Horikoshi

*この研究の対応する著者

研究成果査読

2 被引用数 (Scopus)

抄録

ZnSe/MgCdS and ZnCdS/MgCdS superlattices were grown on semi insulating (001) oriented GaAs substrates by molecular beam epitaxy (MBE). The crystal quality and optical properties were examined for both superlattices. The observed photoluminescence (PL) peak intensity of ZnCdS/MgCdS was much stronger than that of ZnSe/MgCdS while ZnSe/MgCdS showed sharper luminescence line width. The PL peak energy position was compared with the theoretical value derived from the Kronig-Penny model. The degradation of crystal quality was observed by increasing Mg content in MgCdS layer and drastic PL property degradation was observed when the Mg content in the layer exceeded a certain value. Two superlattices were applied to the UV-A sensor of the metal-semiconductor-metal (MSM) configuration. Both photodetectors exhibited a high sensitivity in the UV-A region with a sharp cut-off in the visible wave-length region; the ON-OFF ratio of sensor was about 103 for both structures.

本文言語English
ページ(範囲)1225-1228
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
3
4
DOI
出版ステータスPublished - 2006 5 8
イベント12th International Conference on II-VI Compounds - Warsaw, Poland
継続期間: 2005 9 122005 9 16

ASJC Scopus subject areas

  • 凝縮系物理学

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