MBE of wide bandgap II-VI compounds

R. L. Gunshor, M. Kobayashi, L. A. Kolodziejski, N. Otsuka, A. V. Nurmikko

研究成果: Article査読

4 被引用数 (Scopus)

抄録

A pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb, having potential for the development of novel visible light emitting injection devices, has been grown by MBE. A variety of microstructural and optical evaluation techniques have provided evidence of high structural quality. The nonequilibrium growth capability of the MBE technique has enabled the growth of heterostructures incorporating a previously hypothetical widegap magnetic semiconductor, the zincblende phase of MnTe. Electron diffraction measurements of cross-sectional samples reveal only zincblende phases. Double barrier structures incorporating zincblende MnTe are found to exhibit 2D electron and hole confinement in CdTe and ZnTe quantum well layers, and serve to confirm the zincblende MnTe bandgap at 3.2 eV.

本文言語English
ページ(範囲)390-398
ページ数9
ジャーナルJournal of Crystal Growth
99
1-4
DOI
出版ステータスPublished - 1990 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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