Measurement of anisotropic biaxial stresses in si1xgex/si mesa structures by oil-immersion raman spectroscopy

Daisuke Kosemura*, Motohiro Tomita, Koji Usuda, Tsutomu Tezuka, Atsushi Ogura

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Anisotropic biaxial stress states in Si1xGex /Si mesa structures were evaluated by oil-immersion Raman spectroscopy. Using a high-numericalaperture lens, the electrical field component perpendicular to the surface, i.e., z-polarization, can be obtained. The z-polarization enables the excitation of the forbidden optical phonon mode, i.e., the transverse optical (TO) phonon mode, even under the backscattering geometry from (001)-oriented diamond-type crystals. The anisotropic biaxial stress evaluation of Si1xGex was considered difficult compared with that of Si, because many unknown parameters exist for Si1xGex , e.g., phonon deformation potentials (PDPs), the Ge concentration x, and the factor of Raman shift on x. In this study, PDPs and the Ge concentration in Si1xGex were investigated in detail. As a result, using precise PDPs and x, a clear dependence of anisotropic biaxial stress states in Si1xGex on the mesa structure shape was observed.

本文言語English
論文番号04CA05
ジャーナルJapanese journal of applied physics
52
4 PART 2
DOI
出版ステータスPublished - 2013 4
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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