Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Lan Zhang, Yang Ju, Atsushi Hosoi, Akifumi Fujimoto

研究成果: Article

3 引用 (Scopus)

抄録

The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

元の言語English
ページ(範囲)1917-1922
ページ数6
ジャーナルMicrosystem Technologies
18
発行部数11
DOI
出版物ステータスPublished - 2012 11
外部発表Yes

Fingerprint

Oxides
Electric properties
electrical properties
Microwaves
atomic force microscopy
microwaves
Microscopes
oxides
probes
microscopes
Dielectric films
Topography
Oxide films
oxide films
topography

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe. / Zhang, Lan; Ju, Yang; Hosoi, Atsushi; Fujimoto, Akifumi.

:: Microsystem Technologies, 巻 18, 番号 11, 11.2012, p. 1917-1922.

研究成果: Article

Zhang, Lan ; Ju, Yang ; Hosoi, Atsushi ; Fujimoto, Akifumi. / Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe. :: Microsystem Technologies. 2012 ; 巻 18, 番号 11. pp. 1917-1922.
@article{8025c694485040b59809a82547274706,
title = "Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe",
abstract = "The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.",
author = "Lan Zhang and Yang Ju and Atsushi Hosoi and Akifumi Fujimoto",
year = "2012",
month = "11",
doi = "10.1007/s00542-012-1512-2",
language = "English",
volume = "18",
pages = "1917--1922",
journal = "Microsystem Technologies",
issn = "0946-7076",
publisher = "Springer Verlag",
number = "11",

}

TY - JOUR

T1 - Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

AU - Zhang, Lan

AU - Ju, Yang

AU - Hosoi, Atsushi

AU - Fujimoto, Akifumi

PY - 2012/11

Y1 - 2012/11

N2 - The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

AB - The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

UR - http://www.scopus.com/inward/record.url?scp=84870241440&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870241440&partnerID=8YFLogxK

U2 - 10.1007/s00542-012-1512-2

DO - 10.1007/s00542-012-1512-2

M3 - Article

AN - SCOPUS:84870241440

VL - 18

SP - 1917

EP - 1922

JO - Microsystem Technologies

JF - Microsystem Technologies

SN - 0946-7076

IS - 11

ER -