Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Lan Zhang, Yang Ju*, Atsushi Hosoi, Akifumi Fujimoto

*この研究の対応する著者

研究成果: Article査読

6 被引用数 (Scopus)

抄録

The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

本文言語English
ページ(範囲)1917-1922
ページ数6
ジャーナルMicrosystem Technologies
18
11
DOI
出版ステータスPublished - 2012 11月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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