Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Lan Zhang, Yang Ju, Atsushi Hosoi, Akifumi Fujimoto

研究成果: Conference contribution

抜粋

The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

元の言語English
ホスト出版物のタイトルDTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
ページ334-338
ページ数5
出版物ステータスPublished - 2011 12 1
外部発表Yes
イベント2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011 - Aix-en-Provence, France
継続期間: 2011 5 112011 5 13

出版物シリーズ

名前DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

Conference

Conference2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011
France
Aix-en-Provence
期間11/5/1111/5/13

ASJC Scopus subject areas

  • Hardware and Architecture

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  • これを引用

    Zhang, L., Ju, Y., Hosoi, A., & Fujimoto, A. (2011). Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe. : DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (pp. 334-338). [6108014] (DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS).