Measurement of mismatch factor and noise of SRAM PUF using small bias voltage

Ziyang Cui; Baikun Zheng; Yanhao Piao; Shiyu Liu; Ronghao Xie; Hirofumi Shinohara

doi:10.1109/ICMTS.2017.7954264

Measurement of mismatch factor and noise of SRAM PUF using small bias voltage

Ziyang Cui, Baikun Zheng, Yanhao Piao, Shiyu Liu, Ronghao Xie, Hirofumi Shinohara

大学院情報生産システム研究科

研究成果: Conference contribution

7 被引用数 (Scopus)

抄録

Mismatch factor of SRAM bit cell and noise factor that affects its power up state are measured using 256 bit SRAM PUF test structure with bias voltage inputs. Probability of power up state is used to extract a mismatch factor normalized by σ_n (sigma noise voltage). By combining shifted bias voltages and repeat evaluation, whole 256 bit mismatch factors from real SRAM with small modification are obtained. According to the measurement data, it is confirmed that both noise factor and mismatch factor follow Gaussian distribution within a range of ±3.5σ and ± 2.9σ, respectively.

本文言語	English
ホスト出版物のタイトル	2017 International Conference of Microelectronic Test Structures, ICMTS 2017
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子版）	9781509036158
DOI	https://doi.org/10.1109/ICMTS.2017.7954264
出版ステータス	Published - 2017 6月 20
イベント	2017 International Conference of Microelectronic Test Structures, ICMTS 2017 - Grenoble, France 継続期間: 2017 3月 27 → 2017 3月 30

出版物シリーズ

名前	IEEE International Conference on Microelectronic Test Structures

Other

Other	2017 International Conference of Microelectronic Test Structures, ICMTS 2017
国/地域	France
City	Grenoble
Period	17/3/27 → 17/3/30

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1109/ICMTS.2017.7954264

他のファイルとリンク

引用スタイル

Cui, Z., Zheng, B., Piao, Y., Liu, S., Xie, R., & Shinohara, H. (2017). Measurement of mismatch factor and noise of SRAM PUF using small bias voltage. In 2017 International Conference of Microelectronic Test Structures, ICMTS 2017 [7954264] (IEEE International Conference on Microelectronic Test Structures). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMTS.2017.7954264

Measurement of mismatch factor and noise of SRAM PUF using small bias voltage. / Cui, Ziyang; Zheng, Baikun; Piao, Yanhao その他.

2017 International Conference of Microelectronic Test Structures, ICMTS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7954264 (IEEE International Conference on Microelectronic Test Structures).

研究成果: Conference contribution

Cui, Z, Zheng, B, Piao, Y, Liu, S, Xie, R & Shinohara, H 2017, Measurement of mismatch factor and noise of SRAM PUF using small bias voltage. in 2017 International Conference of Microelectronic Test Structures, ICMTS 2017., 7954264, IEEE International Conference on Microelectronic Test Structures, Institute of Electrical and Electronics Engineers Inc., 2017 International Conference of Microelectronic Test Structures, ICMTS 2017, Grenoble, France, 17/3/27. https://doi.org/10.1109/ICMTS.2017.7954264

Cui Z, Zheng B, Piao Y, Liu S, Xie R, Shinohara H. Measurement of mismatch factor and noise of SRAM PUF using small bias voltage. In 2017 International Conference of Microelectronic Test Structures, ICMTS 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7954264. (IEEE International Conference on Microelectronic Test Structures). doi: 10.1109/ICMTS.2017.7954264

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title = "Measurement of mismatch factor and noise of SRAM PUF using small bias voltage",

abstract = "Mismatch factor of SRAM bit cell and noise factor that affects its power up state are measured using 256 bit SRAM PUF test structure with bias voltage inputs. Probability of power up state is used to extract a mismatch factor normalized by σn (sigma noise voltage). By combining shifted bias voltages and repeat evaluation, whole 256 bit mismatch factors from real SRAM with small modification are obtained. According to the measurement data, it is confirmed that both noise factor and mismatch factor follow Gaussian distribution within a range of ±3.5σ and ± 2.9σ, respectively.",

author = "Ziyang Cui and Baikun Zheng and Yanhao Piao and Shiyu Liu and Ronghao Xie and Hirofumi Shinohara",

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AU - Piao, Yanhao

AU - Liu, Shiyu

AU - Xie, Ronghao

AU - Shinohara, Hirofumi

PY - 2017/6/20

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N2 - Mismatch factor of SRAM bit cell and noise factor that affects its power up state are measured using 256 bit SRAM PUF test structure with bias voltage inputs. Probability of power up state is used to extract a mismatch factor normalized by σn (sigma noise voltage). By combining shifted bias voltages and repeat evaluation, whole 256 bit mismatch factors from real SRAM with small modification are obtained. According to the measurement data, it is confirmed that both noise factor and mismatch factor follow Gaussian distribution within a range of ±3.5σ and ± 2.9σ, respectively.

AB - Mismatch factor of SRAM bit cell and noise factor that affects its power up state are measured using 256 bit SRAM PUF test structure with bias voltage inputs. Probability of power up state is used to extract a mismatch factor normalized by σn (sigma noise voltage). By combining shifted bias voltages and repeat evaluation, whole 256 bit mismatch factors from real SRAM with small modification are obtained. According to the measurement data, it is confirmed that both noise factor and mismatch factor follow Gaussian distribution within a range of ±3.5σ and ± 2.9σ, respectively.

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T3 - IEEE International Conference on Microelectronic Test Structures

BT - 2017 International Conference of Microelectronic Test Structures, ICMTS 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 International Conference of Microelectronic Test Structures, ICMTS 2017

Y2 - 27 March 2017 through 30 March 2017

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Measurement of mismatch factor and noise of SRAM PUF using small bias voltage

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ASJC Scopus subject areas

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