Measurement of mismatch factor and noise of SRAM PUF using small bias voltage

Ziyang Cui, Baikun Zheng, Yanhao Piao, Shiyu Liu, Ronghao Xie, Hirofumi Shinohara

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

Mismatch factor of SRAM bit cell and noise factor that affects its power up state are measured using 256 bit SRAM PUF test structure with bias voltage inputs. Probability of power up state is used to extract a mismatch factor normalized by σn (sigma noise voltage). By combining shifted bias voltages and repeat evaluation, whole 256 bit mismatch factors from real SRAM with small modification are obtained. According to the measurement data, it is confirmed that both noise factor and mismatch factor follow Gaussian distribution within a range of ±3.5σ and ± 2.9σ, respectively.

本文言語English
ホスト出版物のタイトル2017 International Conference of Microelectronic Test Structures, ICMTS 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509036158
DOI
出版ステータスPublished - 2017 6 20
イベント2017 International Conference of Microelectronic Test Structures, ICMTS 2017 - Grenoble, France
継続期間: 2017 3 272017 3 30

Other

Other2017 International Conference of Microelectronic Test Structures, ICMTS 2017
CountryFrance
CityGrenoble
Period17/3/2717/3/30

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

フィンガープリント 「Measurement of mismatch factor and noise of SRAM PUF using small bias voltage」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル