Measurement of SRAM power-up state for PUF applications using an addressable SRAM cell array test structure

Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto, Hirofumi Shinohara

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

SRAM data just after power-up were measured using an addressable SRAM cell array test structure. It was found that the results are strongly affected by the address switching noise and memory effect. An addressing sequence combined with word line reset pulse application is proposed for reliable power-up data stability evaluation.

本文言語English
ホスト出版物のタイトル2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ130-134
ページ数5
ISBN(電子版)9781467387934
DOI
出版ステータスPublished - 2016 5 20
イベント29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Yokohama, Japan
継続期間: 2016 3 282016 3 31

出版物シリーズ

名前IEEE International Conference on Microelectronic Test Structures
2016-May

Other

Other29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016
国/地域Japan
CityYokohama
Period16/3/2816/3/31

ASJC Scopus subject areas

  • 電子工学および電気工学

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