Measurements of Heat of Formation of GaP, InP, GaAs, InAs, GaSb and InSb

Katsunori Yamaguchi, Yoichi Takeda, Kazuo Kameda, Kimio Itagaki

研究成果: Article査読

35 被引用数 (Scopus)

抄録

The heats of formation of six III-V compounds of GaP, InP, GaAs, InAs, GaSb and InSb were determined at 773 K from the heats of dissolution of these compounds and the components in a liquid tin solvent, using a Calvet-type twin solution calorimeter. The standard heats of formation at 298.15 K, ΔH° f, 298.15, are: GaP (P: red) -103.2±1.7 kJ/mol, InP (P: red) −70.2±4.4 kJ/mol, GaAs −87.7±0.5 kJ/mol, InAs − 60.0± 1.0 kJ/mol, GaSb −45.9±0.3 kJ/mol and InSb −34.1 ±0.6 kJ/mol. A relation was found between the heats of formation and the bond formation energy, and the overlap interaction in the cohesive energies of these compounds. ΔH° f, 298.15 decreased linearly with increasing bond formation energy and overlap interaction energy per bond.

本文言語English
ページ(範囲)596-602
ページ数7
ジャーナルMaterials Transactions, JIM
35
9
DOI
出版ステータスPublished - 1994
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)

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