Mechanism of superior suppression effect on gate current leakage in ultrathin Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

Chengxin Wang, Narihiko Maeda, Masanobu Hiroki, Haruki Yokoyama, Noriyuki Watanabe, Toshiki Makimoto, Takotoino Enoki, Takashi Kobayashi

研究成果: Article

12 引用 (Scopus)

抄録

On the basis of the thin barrier surface (TSB) model, the mechanism of gate current leakage under reverse gate-source bias in nitride-based heterostructure field effect transistors (HFETs) and metal-insulator-semiconductor (MIS) HFETs with an ultrathin (1 nm/0.5 nm) Al2O3/Si3N 4 bilayer has been investigated. The simulations show that the electron tunneling through the Schottky barrier is the dominant mechanism for gate current in conventional HFETs due to the high density of donor like defects on the surface. An Al2O3/Si3N4 bilayer insulator can substantially reduce the donor like surface defect density and then significantly suppress the gate current leakage in nitrides-base MIS-HFET devices.

元の言語English
ページ(範囲)40-42
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
発行部数1 A
DOI
出版物ステータスPublished - 2006 1 10
外部発表Yes

Fingerprint

MOSFET devices
High electron mobility transistors
Leakage currents
leakage
field effect transistors
retarding
MIS (semiconductors)
Nitrides
nitrides
Semiconductor materials
Electron tunneling
Defect density
Surface defects
surface defects
electron tunneling
Metals
insulators
Defects
defects
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Mechanism of superior suppression effect on gate current leakage in ultrathin Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors. / Wang, Chengxin; Maeda, Narihiko; Hiroki, Masanobu; Yokoyama, Haruki; Watanabe, Noriyuki; Makimoto, Toshiki; Enoki, Takotoino; Kobayashi, Takashi.

:: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 45, 番号 1 A, 10.01.2006, p. 40-42.

研究成果: Article

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abstract = "On the basis of the thin barrier surface (TSB) model, the mechanism of gate current leakage under reverse gate-source bias in nitride-based heterostructure field effect transistors (HFETs) and metal-insulator-semiconductor (MIS) HFETs with an ultrathin (1 nm/0.5 nm) Al2O3/Si3N 4 bilayer has been investigated. The simulations show that the electron tunneling through the Schottky barrier is the dominant mechanism for gate current in conventional HFETs due to the high density of donor like defects on the surface. An Al2O3/Si3N4 bilayer insulator can substantially reduce the donor like surface defect density and then significantly suppress the gate current leakage in nitrides-base MIS-HFET devices.",
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author = "Chengxin Wang and Narihiko Maeda and Masanobu Hiroki and Haruki Yokoyama and Noriyuki Watanabe and Toshiki Makimoto and Takotoino Enoki and Takashi Kobayashi",
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T1 - Mechanism of superior suppression effect on gate current leakage in ultrathin Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

AU - Wang, Chengxin

AU - Maeda, Narihiko

AU - Hiroki, Masanobu

AU - Yokoyama, Haruki

AU - Watanabe, Noriyuki

AU - Makimoto, Toshiki

AU - Enoki, Takotoino

AU - Kobayashi, Takashi

PY - 2006/1/10

Y1 - 2006/1/10

N2 - On the basis of the thin barrier surface (TSB) model, the mechanism of gate current leakage under reverse gate-source bias in nitride-based heterostructure field effect transistors (HFETs) and metal-insulator-semiconductor (MIS) HFETs with an ultrathin (1 nm/0.5 nm) Al2O3/Si3N 4 bilayer has been investigated. The simulations show that the electron tunneling through the Schottky barrier is the dominant mechanism for gate current in conventional HFETs due to the high density of donor like defects on the surface. An Al2O3/Si3N4 bilayer insulator can substantially reduce the donor like surface defect density and then significantly suppress the gate current leakage in nitrides-base MIS-HFET devices.

AB - On the basis of the thin barrier surface (TSB) model, the mechanism of gate current leakage under reverse gate-source bias in nitride-based heterostructure field effect transistors (HFETs) and metal-insulator-semiconductor (MIS) HFETs with an ultrathin (1 nm/0.5 nm) Al2O3/Si3N 4 bilayer has been investigated. The simulations show that the electron tunneling through the Schottky barrier is the dominant mechanism for gate current in conventional HFETs due to the high density of donor like defects on the surface. An Al2O3/Si3N4 bilayer insulator can substantially reduce the donor like surface defect density and then significantly suppress the gate current leakage in nitrides-base MIS-HFET devices.

KW - Alo /SiN dielectric layer

KW - Current tunneling

KW - Field-effect transistor

KW - Gate current leakage

KW - Metal-insulator-semiconductor

KW - Thin surface barrier model

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