Mechanisms Controlling Preferred Orientation of Chemical Vapour Deposited Polycrystalline Films

Yuya Kajikawa*, Suguru Noda, Hiroshi Komiyama

*この研究の対応する著者

研究成果: Conference article査読

7 被引用数 (Scopus)

抄録

In the absence of epitaxy between a film and a substrate, the preferred orientation of poly crystal line films can often be explained by the "evolutionary selection rule", which states that grains with the fastest growing direction normal to the substrate envelope the other grains and determine the final orientation of the film. However, the mechanism determining the fastest growing plane and the factors affecting the growth rates of each plane are still not well understood. We examined existing experimental results in the previous literatures and found a correlation between process conditions and preferred orientation for poly-Si and poly-SiC thin films. We present a model based on Langmuir-type adsorption for predicting preferred orientation, which agrees well with experimental results in the previous literatures for Si and SiC.

本文言語English
ページ(範囲)411-416
ページ数6
ジャーナルSolid State Phenomena
93
DOI
出版ステータスPublished - 2003
外部発表はい
イベントPolycrystalline Semiconductors VII - Nara, United States
継続期間: 2003 9月 102003 9月 13

ASJC Scopus subject areas

  • 原子分子物理学および光学
  • 材料科学(全般)
  • 凝縮系物理学

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