Memory effect of diamond in-plane-gated field-effect transistors

Yu Sumikawa, Tokishige Banno, Kensaku Kobayashi, Yutaka Itoh, Hitoshi Umezawa, Hiroshi Kawarada

研究成果: Article査読

12 被引用数 (Scopus)

抄録

The analysis of memory effect of diamond in-plane-gated field effect transistors (IPGFETs) was carried out. This was observed in hydrogen terminated and oxygen terminated diamond surfaces. The hysteresis characteristics were observed under the light irradiation at room temperature in the diamond IPGFETs. It was concluded that the carrier trap sites on the insulating part of IPGFETs caused the hysteresis characteristics.

本文言語English
ページ(範囲)139-141
ページ数3
ジャーナルApplied Physics Letters
85
1
DOI
出版ステータスPublished - 2004 7 5
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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