Memristive operations demonstrated by gap-type atomic switches

Tsuyoshi Hasegawa*, Alpana Nayak, Takeo Ohno, Kazuya Terabe, Tohru Tsuruoka, James K. Gimzewski, Masakazu Aono

*この研究の対応する著者

研究成果: Article査読

35 被引用数 (Scopus)

抄録

We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.

本文言語English
ページ(範囲)811-815
ページ数5
ジャーナルApplied Physics A: Materials Science and Processing
102
4
DOI
出版ステータスPublished - 2011 3月 1
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 材料科学(全般)

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