Metal-semiconductor field-effect transistors on hydrogen-terminated diamond surfaces

Engineering & Materials Science

• MESFET devices 100%
• Diamonds 61%
• Hydrogen 48%
• Transconductance 36%
• Electronegativity 27%
• Diamond films 23%
• Drain current 19%
• Chemical vapor deposition 17%
• Metals 9%

Chemical Compounds

• Field Effect 60%
• Diamond 58%
• Transconductance 47%
• Simulation 29%
• Drain Current 23%
• Surface 19%
• Length 18%
• Electronegativity 16%
• Liquid Film 7%
• Metal 6%

Physics & Astronomy

• diamonds 48%
• field effect transistors 48%
• hydrogen 37%
• metals 31%
• transconductance 26%
• surface layers 21%
• simulation 14%
• diamond films 13%
• depletion 10%
• vapor deposition 9%
• saturation 8%
• augmentation 7%
• performance 5%