Metalization of AIN Ceramics by Electroless Ni-P Plating

Tetsuya Osaka, Hiroto Nagata, Eiji Nakajima, Ichiro Koiwa

研究成果: Article査読

36 被引用数 (Scopus)

抄録

Highly thermally conductive aluminum nitride ceramics were metalized by an electroless plated Ni-P film for the purpose of utilizing them in practical electronic circuit substrates. Aluminum nitride substrates were effectively etched by NaOH solution, and the adhesion strength between AIN and the Ni-P film was found to increase with an increase in surface roughness. At Ra value greater than 0.63 μm, adhesion strength increased to 2.0 kg mm-2, and a maximum of 3.0 kg mm-2 was obtained at Ra = 1.24 μm. The NaOH-etched AIN substrates, however, had a higher adhesion strength than substrates of abraded AIN or abraded Al2O3 with the same roughness. SEM observation showed that the surface of AIN substrate was selectively etched in the regions between adjoining large particles, and that Ni-P projections became effective interlocking points. It was therefore concluded that substrates of new aluminum nitride of high thermal conductivity are capable of being effectively metalized by electroless plating method, and that the main factor contributing to film adhesion strength is interlocking surface structures that are formed through selective etching by NaOH.

本文言語English
ページ(範囲)2345-2349
ページ数5
ジャーナルJournal of the Electrochemical Society
133
11
DOI
出版ステータスPublished - 1986 11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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