Metallic Behavior of Lightly Doped [Formula presented] with a Fermi Surface Forming an Arc

T. Yoshida; X. J. Zhou; T. Sasagawa; W. L. Yang; P. V. Bogdanov; A. Lanzara; Z. Hussain; T. Mizokawa; A. Fujimori; H. Eisaki; Z. X. Shen; T. Kakeshita; S. Uchida

doi:10.1103/PhysRevLett.91.027001

Metallic Behavior of Lightly Doped [Formula presented] with a Fermi Surface Forming an Arc

T. Yoshida, X. J. Zhou, T. Sasagawa, W. L. Yang, P. V. Bogdanov, A. Lanzara, Z. Hussain, T. Mizokawa, A. Fujimori, H. Eisaki, Z. X. Shen, T. Kakeshita, S. Uchida

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

Lightly doped [Formula presented] in the so-called insulating hase has been studied by angle-resolved photoemission spectroscopy. We have observed that a quasiparticle (QP) peak crosses the Fermi level in the node direction of the [Formula presented]-wave superconducting gap, forming an arc of Fermi surface, which explains the metallic behavior at high temperatures of the lightly doped materials. The QP spectral weight of the arc smoothly increases with hole doping, which we attribute to the [Formula presented] behavior of the carrier number in the underdoped and lightly doped regions.

本文言語	English
ジャーナル	Physical Review Letters
巻	91
号	2
DOI	https://doi.org/10.1103/PhysRevLett.91.027001
出版ステータス	Published - 2003 7月 8
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（全般）

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10.1103/PhysRevLett.91.027001

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abstract = "Lightly doped [Formula presented] in the so-called insulating hase has been studied by angle-resolved photoemission spectroscopy. We have observed that a quasiparticle (QP) peak crosses the Fermi level in the node direction of the [Formula presented]-wave superconducting gap, forming an arc of Fermi surface, which explains the metallic behavior at high temperatures of the lightly doped materials. The QP spectral weight of the arc smoothly increases with hole doping, which we attribute to the [Formula presented] behavior of the carrier number in the underdoped and lightly doped regions.",

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T1 - Metallic Behavior of Lightly Doped [Formula presented] with a Fermi Surface Forming an Arc

AU - Yoshida, T.

AU - Zhou, X. J.

AU - Sasagawa, T.

AU - Yang, W. L.

AU - Bogdanov, P. V.

AU - Lanzara, A.

AU - Hussain, Z.

AU - Mizokawa, T.

AU - Fujimori, A.

AU - Eisaki, H.

AU - Shen, Z. X.

AU - Kakeshita, T.

AU - Uchida, S.

PY - 2003/7/8

Y1 - 2003/7/8

N2 - Lightly doped [Formula presented] in the so-called insulating hase has been studied by angle-resolved photoemission spectroscopy. We have observed that a quasiparticle (QP) peak crosses the Fermi level in the node direction of the [Formula presented]-wave superconducting gap, forming an arc of Fermi surface, which explains the metallic behavior at high temperatures of the lightly doped materials. The QP spectral weight of the arc smoothly increases with hole doping, which we attribute to the [Formula presented] behavior of the carrier number in the underdoped and lightly doped regions.

AB - Lightly doped [Formula presented] in the so-called insulating hase has been studied by angle-resolved photoemission spectroscopy. We have observed that a quasiparticle (QP) peak crosses the Fermi level in the node direction of the [Formula presented]-wave superconducting gap, forming an arc of Fermi surface, which explains the metallic behavior at high temperatures of the lightly doped materials. The QP spectral weight of the arc smoothly increases with hole doping, which we attribute to the [Formula presented] behavior of the carrier number in the underdoped and lightly doped regions.

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Metallic Behavior of Lightly Doped [Formula presented] with a Fermi Surface Forming an Arc

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