Method of probe measurement in N2SiH4 microwave plasma

Isamu Kato, Tadashi Sakamoto, Tsuyoshi Shimoda

研究成果: Article

5 引用 (Scopus)

抄録

It has been clarified that probe current decreases linearly with increasing deposition time of a SiN film on a probe. From this result, a probe current-voltage characteristic without any deposition of the SiN film can be extrapolated from some probe current-voltage characteristics of different deposition times of the SiN film.

元の言語English
ページ(範囲)307-310
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
33
発行部数1 A
出版物ステータスPublished - 1994 1

Fingerprint

Microwaves
Plasmas
microwaves
probes
Current voltage characteristics
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Method of probe measurement in N2SiH4 microwave plasma. / Kato, Isamu; Sakamoto, Tadashi; Shimoda, Tsuyoshi.

:: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 33, 番号 1 A, 01.1994, p. 307-310.

研究成果: Article

Kato, Isamu ; Sakamoto, Tadashi ; Shimoda, Tsuyoshi. / Method of probe measurement in N2SiH4 microwave plasma. :: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1994 ; 巻 33, 番号 1 A. pp. 307-310.
@article{490271ddf4f64bd8bab9851ecc41c831,
title = "Method of probe measurement in N2SiH4 microwave plasma",
abstract = "It has been clarified that probe current decreases linearly with increasing deposition time of a SiN film on a probe. From this result, a probe current-voltage characteristic without any deposition of the SiN film can be extrapolated from some probe current-voltage characteristics of different deposition times of the SiN film.",
author = "Isamu Kato and Tadashi Sakamoto and Tsuyoshi Shimoda",
year = "1994",
month = "1",
language = "English",
volume = "33",
pages = "307--310",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "1 A",

}

TY - JOUR

T1 - Method of probe measurement in N2SiH4 microwave plasma

AU - Kato, Isamu

AU - Sakamoto, Tadashi

AU - Shimoda, Tsuyoshi

PY - 1994/1

Y1 - 1994/1

N2 - It has been clarified that probe current decreases linearly with increasing deposition time of a SiN film on a probe. From this result, a probe current-voltage characteristic without any deposition of the SiN film can be extrapolated from some probe current-voltage characteristics of different deposition times of the SiN film.

AB - It has been clarified that probe current decreases linearly with increasing deposition time of a SiN film on a probe. From this result, a probe current-voltage characteristic without any deposition of the SiN film can be extrapolated from some probe current-voltage characteristics of different deposition times of the SiN film.

UR - http://www.scopus.com/inward/record.url?scp=0028201484&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028201484&partnerID=8YFLogxK

M3 - Article

VL - 33

SP - 307

EP - 310

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1 A

ER -