抄録
A study was conducted on the magnesium (Mg)-acceptor activation mechanism and transport characteristics in a Mg-doped InGaN layer grown by metalorganic vapor phase epitaxy. It was found that self-compensation occurred in Mg-doped InGaN at higher doping levels. The temperature dependence of the hole concentration in Mg-doped InGaN showed that the acceptor activation energy decreased with increasing mole fraction.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 3370-3375 |
| ページ数 | 6 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 93 |
| 号 | 6 |
| DOI | |
| 出版ステータス | Published - 2003 3月 15 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（全般）