Microscopic characterization of printable low-voltage electrolyte-gated transistors by electron spin resonance

Kazuhiro Marumoto, Masaki Tsuji, Yohei Yomogida, Taishi Takenobu, Yoshihiro Iwasa

    研究成果: Article

    1 引用 (Scopus)

    抄録

    We have investigated the microscopic properties of printable low-voltage electrolyte-gated transistors using electron spin resonance (ESR). The utilized devices were ion gel-gated regioregular poly(3-hexylthiophene) (RR-P3HT) thin-film transistors. We performed simultaneous mesurements of field-induced ESR (FI-ESR) and device characteristics using the same device. Clear FI-ESR signals due to hole carriers (positive polarons) were observed by applying a negative gate voltage. The anisotropy of the ESR linewidth indicated two-dimensional magnetic interactions between high density charges. The magnetism of the majority of hole carriers at a high charge density was found to be nonmagnetic from the simultaneous measurements of FI-ESR and transfer characteristics. The anisotropy of the g value of the ESR signal at a high gate voltage indicated the disordered molecular orientation of RR-P3HT where paramagnetic holes exist. These results provide insight into the charge transport mechanism of RR-P3HT polymer semiconductors with high charge densities.

    元の言語English
    記事番号05DC05
    ジャーナルJapanese Journal of Applied Physics
    52
    発行部数5 PART 2
    DOI
    出版物ステータスPublished - 2013 5

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    low voltage
    Paramagnetic resonance
    electron paramagnetic resonance
    Transistors
    transistors
    Electrolytes
    electrolytes
    Electric potential
    Charge density
    anisotropy
    electric potential
    Anisotropy
    polarons
    Polarons
    Molecular orientation
    Magnetism
    gels
    Thin film transistors
    Linewidth
    Charge transfer

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    これを引用

    Microscopic characterization of printable low-voltage electrolyte-gated transistors by electron spin resonance. / Marumoto, Kazuhiro; Tsuji, Masaki; Yomogida, Yohei; Takenobu, Taishi; Iwasa, Yoshihiro.

    :: Japanese Journal of Applied Physics, 巻 52, 番号 5 PART 2, 05DC05, 05.2013.

    研究成果: Article

    Marumoto, Kazuhiro ; Tsuji, Masaki ; Yomogida, Yohei ; Takenobu, Taishi ; Iwasa, Yoshihiro. / Microscopic characterization of printable low-voltage electrolyte-gated transistors by electron spin resonance. :: Japanese Journal of Applied Physics. 2013 ; 巻 52, 番号 5 PART 2.
    @article{15be4cf358ad42249731d00e4775c1b1,
    title = "Microscopic characterization of printable low-voltage electrolyte-gated transistors by electron spin resonance",
    abstract = "We have investigated the microscopic properties of printable low-voltage electrolyte-gated transistors using electron spin resonance (ESR). The utilized devices were ion gel-gated regioregular poly(3-hexylthiophene) (RR-P3HT) thin-film transistors. We performed simultaneous mesurements of field-induced ESR (FI-ESR) and device characteristics using the same device. Clear FI-ESR signals due to hole carriers (positive polarons) were observed by applying a negative gate voltage. The anisotropy of the ESR linewidth indicated two-dimensional magnetic interactions between high density charges. The magnetism of the majority of hole carriers at a high charge density was found to be nonmagnetic from the simultaneous measurements of FI-ESR and transfer characteristics. The anisotropy of the g value of the ESR signal at a high gate voltage indicated the disordered molecular orientation of RR-P3HT where paramagnetic holes exist. These results provide insight into the charge transport mechanism of RR-P3HT polymer semiconductors with high charge densities.",
    author = "Kazuhiro Marumoto and Masaki Tsuji and Yohei Yomogida and Taishi Takenobu and Yoshihiro Iwasa",
    year = "2013",
    month = "5",
    doi = "10.7567/JJAP.52.05DC05",
    language = "English",
    volume = "52",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "5 PART 2",

    }

    TY - JOUR

    T1 - Microscopic characterization of printable low-voltage electrolyte-gated transistors by electron spin resonance

    AU - Marumoto, Kazuhiro

    AU - Tsuji, Masaki

    AU - Yomogida, Yohei

    AU - Takenobu, Taishi

    AU - Iwasa, Yoshihiro

    PY - 2013/5

    Y1 - 2013/5

    N2 - We have investigated the microscopic properties of printable low-voltage electrolyte-gated transistors using electron spin resonance (ESR). The utilized devices were ion gel-gated regioregular poly(3-hexylthiophene) (RR-P3HT) thin-film transistors. We performed simultaneous mesurements of field-induced ESR (FI-ESR) and device characteristics using the same device. Clear FI-ESR signals due to hole carriers (positive polarons) were observed by applying a negative gate voltage. The anisotropy of the ESR linewidth indicated two-dimensional magnetic interactions between high density charges. The magnetism of the majority of hole carriers at a high charge density was found to be nonmagnetic from the simultaneous measurements of FI-ESR and transfer characteristics. The anisotropy of the g value of the ESR signal at a high gate voltage indicated the disordered molecular orientation of RR-P3HT where paramagnetic holes exist. These results provide insight into the charge transport mechanism of RR-P3HT polymer semiconductors with high charge densities.

    AB - We have investigated the microscopic properties of printable low-voltage electrolyte-gated transistors using electron spin resonance (ESR). The utilized devices were ion gel-gated regioregular poly(3-hexylthiophene) (RR-P3HT) thin-film transistors. We performed simultaneous mesurements of field-induced ESR (FI-ESR) and device characteristics using the same device. Clear FI-ESR signals due to hole carriers (positive polarons) were observed by applying a negative gate voltage. The anisotropy of the ESR linewidth indicated two-dimensional magnetic interactions between high density charges. The magnetism of the majority of hole carriers at a high charge density was found to be nonmagnetic from the simultaneous measurements of FI-ESR and transfer characteristics. The anisotropy of the g value of the ESR signal at a high gate voltage indicated the disordered molecular orientation of RR-P3HT where paramagnetic holes exist. These results provide insight into the charge transport mechanism of RR-P3HT polymer semiconductors with high charge densities.

    UR - http://www.scopus.com/inward/record.url?scp=84880874986&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84880874986&partnerID=8YFLogxK

    U2 - 10.7567/JJAP.52.05DC05

    DO - 10.7567/JJAP.52.05DC05

    M3 - Article

    AN - SCOPUS:84880874986

    VL - 52

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 5 PART 2

    M1 - 05DC05

    ER -