抄録
The gas pressure sintering of silicon nitride with 5% MgO as an additive was performed under 10 atm N//2 at 1450 to 1900 degree C. Maximum density of 95% of theoretical value, 3. 19 g/cm**3, was obtained at 1800 degree C. The densification was due to liquid phase sintering and divided into two processes, rearrangement and solution-precipitation. Microstructural studies of cleavages and etched ones revealed that the densification was mainly attributed to rearrangement at lower temperatures than 1500 degree C and solution-precipitation at higher temperatures.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | J Ceram Soc Jpn |
| ページ | 356-360 |
| ページ数 | 5 |
| 巻 | 84 |
| 版 | 8 |
| 出版ステータス | Published - 1976 |
ASJC Scopus subject areas
- Engineering(all)