MICROSTRUCTURAL CHANGE DURING GAS PRESSURE SINTERING OF SILICON NITRIDE.

Mamoru Mitomo, Chuhei Oshima, Masayuki Tsutsumi

    研究成果: Chapter

    1 被引用数 (Scopus)

    抄録

    The gas pressure sintering of silicon nitride with 5% MgO as an additive was performed under 10 atm N//2 at 1450 to 1900 degree C. Maximum density of 95% of theoretical value, 3. 19 g/cm**3, was obtained at 1800 degree C. The densification was due to liquid phase sintering and divided into two processes, rearrangement and solution-precipitation. Microstructural studies of cleavages and etched ones revealed that the densification was mainly attributed to rearrangement at lower temperatures than 1500 degree C and solution-precipitation at higher temperatures.

    本文言語English
    ホスト出版物のタイトルJ Ceram Soc Jpn
    ページ356-360
    ページ数5
    84
    8
    出版ステータスPublished - 1976

    ASJC Scopus subject areas

    • Engineering(all)

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