Microwave atomic force microscopy imaging for nanometer-scale electrical property characterization

Lan Zhang, Yang Ju, Atsushi Hosoi, Akifumi Fujimoto

研究成果: Article査読

29 被引用数 (Scopus)

抄録

We introduce a new type of microscopy which is capable of investigating surface topography and electrical property of conductive and dielectric materials simultaneously on a nanometer scale. The microwave atomic force microscopy is a combination of the principles of the scanning probe microscope and the microwave-measurement technique. As a result, under the noncontact AFM working conditions, we successfully generated a microwave image of a 200-nm Au film coating on a glass wafer substrate with a spatial resolution of 120 nm and a measured voltage difference of 19.2 mV between the two materials.

本文言語English
論文番号123708
ジャーナルReview of Scientific Instruments
81
12
DOI
出版ステータスPublished - 2010 12
外部発表はい

ASJC Scopus subject areas

  • 器械工学

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