Microwave operation of diamond metal-insulator-semiconductor field-effect transistors fabricated on single-crystal chemical vapor deposition substrate

Kazuyuki Hirama, Hidenori Takayanagi, Shintaro Yamauchi, Hitoshi Umezawa, Hiroshi Kawarada*

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated on single-crystal diamond films, and small- and large-signal RF operations were evaluated. This is the first report on large-signal RF operation for diamond MISFETs, and the RF power density was 2.14 W/mm at 1 GHz. This value is comparable to those of GaAs FETs and Si lateral-diffusion metal-oxide-semiconductor field-effect transistors (LDMOSFETs). Also, for single-crystal diamond MISFETs, the highest cutoff frequency (fT) of 30 GHz was obtained in 0.3-μm-gate-length (LG) MISFET. The carrier velocity, which is extracted from the relationship between fT and LG, reached 6×106 cm/s.

本文言語English
ページ(範囲)201-209
ページ数9
ジャーナルNew Diamond and Frontier Carbon Technology
17
4
出版ステータスPublished - 2007 12月 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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