Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated on single-crystal diamond films, and small- and large-signal RF operations were evaluated. This is the first report on large-signal RF operation for diamond MISFETs, and the RF power density was 2.14 W/mm at 1 GHz. This value is comparable to those of GaAs FETs and Si lateral-diffusion metal-oxide-semiconductor field-effect transistors (LDMOSFETs). Also, for single-crystal diamond MISFETs, the highest cutoff frequency (fT) of 30 GHz was obtained in 0.3-μm-gate-length (LG) MISFET. The carrier velocity, which is extracted from the relationship between fT and LG, reached 6×106 cm/s.
|ジャーナル||New Diamond and Frontier Carbon Technology|
|出版物ステータス||Published - 2007 12 1|
ASJC Scopus subject areas
- Materials Science(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films