This study is concerned with the development of a system to fabricate thin films by a microwave plasma chemical vapour deposition method while keeping the substrate out of the discharge plasma. Si thin films are fabricated in a deposition region using an improved coaxial line type microwave CW discharge tube without a silicon deposition on the discharge tube wall. A very uniform Si thin film has been fabricated over a circle with a 10 cm diameter and the deposition rates are 50 to 400 A/min. The structure of the fabricated films is amorphous and the optical band gap is 1. 8 to 2. 0 eV.
|ホスト出版物のタイトル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 1983 1月|
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