MICROWAVE PLASMA CVD SYSTEM TO FABRICATE alpha -Si THIN FILMS OUT OF PLASMA.

Isamu Kato*, Shin ichi Wakan, Shinji Hara

*この研究の対応する著者

    研究成果: Chapter

    31 被引用数 (Scopus)

    抄録

    This study is concerned with the development of a system to fabricate thin films by a microwave plasma chemical vapour deposition method while keeping the substrate out of the discharge plasma. Si thin films are fabricated in a deposition region using an improved coaxial line type microwave CW discharge tube without a silicon deposition on the discharge tube wall. A very uniform Si thin film has been fabricated over a circle with a 10 cm diameter and the deposition rates are 50 to 400 A/min. The structure of the fabricated films is amorphous and the optical band gap is 1. 8 to 2. 0 eV.

    本文言語English
    ホスト出版物のタイトルJapanese Journal of Applied Physics, Part 2: Letters
    22
    1
    出版ステータスPublished - 1983 1

    ASJC Scopus subject areas

    • 工学(全般)

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