Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

K. Kumakura*, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa

*この研究の対応する著者

研究成果: Article査読

17 被引用数 (Scopus)

抄録

We fabricated InGaN p-n junction diode structures on SiC substrates by metalorganic vapor phase epitaxy, and investigated the minority carrier diffusion length in n- and p-InGaN layers by electron beam induced current measurements. The minority electron diffusion length in p-InGaN was little affected by the In content in InGaN. The diffusion length decreased with increasing Mg-doping concentration. The minority hole diffusion length in n-InGaN was little affected by Si-doping concentration but slightly decreased with increasing In content in InGaN. We also fabricated pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors and investigated their common-emitter current-voltage characteristics. The Si-doping concentration in the base was 4×1019 cm-3. The maximum current gain was 21 at a collector current of -10 mA for an emitter size of 30 μm×50 μm. This good performance is ascribed to the large conduction band discontinuity between the AlGaN emitter and InGaN base.

本文言語English
ページ(範囲)787-790
ページ数4
ジャーナルJournal of Crystal Growth
298
SPEC. ISS
DOI
出版ステータスPublished - 2007 1月
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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