Misfit stress relaxation mechanism in GeO2/Ge systems: A classical molecular simulation study

T. Watanabe, T. Onda, I. Ohdomari

研究成果: Conference contribution

8 被引用数 (Scopus)

抄録

The stress relaxation mechanism at the GeO2/Ge interface is studied by means of classical molecular simulation employing empirical force-fields. In general, the chemistry in GeO2 is characterized by weaker bonds and softer bond angles than that in SiO2, which has been considered to lead to the relaxation of the GeO2 film on Ge substrate. However, Ge-O-Ge angle is suffer than Si-O-Si angle, and has a narrower equilibrium angle of 133° than that of Si-O-Si of 144°. The present simulation results show that the narrow Ge-O-Ge bond contribute the reduction of the compressive stress in the GeO2 films. If the Ge-O-Ge bond angle had the same equilibrium angle with Si-O-Si angle, a higher residual stress would remain in the GeO2 films.

本文言語English
ホスト出版物のタイトルSiGe, Ge, and Related Compounds 4
ホスト出版物のサブタイトルMaterials, Processing, and Devices
ページ901-912
ページ数12
6
DOI
出版ステータスPublished - 2010 12 1
イベント4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
継続期間: 2010 10 102010 10 15

出版物シリーズ

名前ECS Transactions
番号6
33
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Conference

Conference4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/10/15

ASJC Scopus subject areas

  • Engineering(all)

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