抜粋
The electrical characteristics of nitrided oxide MISFET's are studied. Channel electron mobility in nitrided oxide is almost half that in oxide. Mobility degradation is analyzed and positive charges are seen to be generated in the initial nitridation step. Negative charges are generated by further nitridation. A strong relationship exists between these charges and mobility degradation. It is therefore thought that mobility degradation is caused by coulomb scattering of positive and negative charges in nitrided oxide.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 166-172 |
| ページ数 | 7 |
| ジャーナル | Journal of the Electrochemical Society |
| 巻 | 135 |
| 発行部数 | 1 |
| 出版物ステータス | Published - 1988 1 |
| 外部発表 | Yes |
ASJC Scopus subject areas
- Electrochemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
フィンガープリント MOBILITY DEGRADATION OF NITRIDED OXIDE MISFET'S.' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Kusaka, T., Hiraiwa, A., & Mukai, K. (1988). MOBILITY DEGRADATION OF NITRIDED OXIDE MISFET'S. Journal of the Electrochemical Society, 135(1), 166-172.