MOBILITY DEGRADATION OF NITRIDED OXIDE MISFET'S.

Takahisa Kusaka, Atsushi Hiraiwa, Kiichiro Mukai

研究成果: Article査読

22 被引用数 (Scopus)

抄録

The electrical characteristics of nitrided oxide MISFET's are studied. Channel electron mobility in nitrided oxide is almost half that in oxide. Mobility degradation is analyzed and positive charges are seen to be generated in the initial nitridation step. Negative charges are generated by further nitridation. A strong relationship exists between these charges and mobility degradation. It is therefore thought that mobility degradation is caused by coulomb scattering of positive and negative charges in nitrided oxide.

本文言語English
ページ(範囲)166-172
ページ数7
ジャーナルJournal of the Electrochemical Society
135
1
出版ステータスPublished - 1988 1
外部発表はい

ASJC Scopus subject areas

  • 電気化学
  • 表面、皮膜および薄膜
  • 表面および界面

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