MOBILITY DEGRADATION OF NITRIDED OXIDE MISFET'S.

Takahisa Kusaka, Atsushi Hiraiwa, Kiichiro Mukai

研究成果: Article

22 引用 (Scopus)

抜粋

The electrical characteristics of nitrided oxide MISFET's are studied. Channel electron mobility in nitrided oxide is almost half that in oxide. Mobility degradation is analyzed and positive charges are seen to be generated in the initial nitridation step. Negative charges are generated by further nitridation. A strong relationship exists between these charges and mobility degradation. It is therefore thought that mobility degradation is caused by coulomb scattering of positive and negative charges in nitrided oxide.

元の言語English
ページ(範囲)166-172
ページ数7
ジャーナルJournal of the Electrochemical Society
135
発行部数1
出版物ステータスPublished - 1988 1
外部発表Yes

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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  • これを引用

    Kusaka, T., Hiraiwa, A., & Mukai, K. (1988). MOBILITY DEGRADATION OF NITRIDED OXIDE MISFET'S. Journal of the Electrochemical Society, 135(1), 166-172.