Modeling of a SiO2/Si(001) structure including step and terrace configurations

Takanobu Watanabe, Iwao Ohdomari

研究成果: Conference article査読

15 被引用数 (Scopus)

抄録

Large-scale modeling of a SiO2/Si(001) structure including a couple of monoatomic steps has been performed by using a novel inter-atomic potential energy function for Si, O mixed systems. The SiO2 film was formed by layer-by-layer insertion of O atoms into Si-Si bonds of Si(001) 2×1 reconstructed surface misoriented from surface normal by 3.2°. Just after the backbond oxidation of the dimer structures, a clear difference in the structural order of oxide films appeared between two types of terraces on which the dimer rows run perpendicular and parallel to the step lines. The difference is explained by the difference in stretching directions of Si-Si intervals into which O atoms are inserted. It was also found that the oxide structure near the step preferentially became amorphous after further oxidation. These results suggest a possibility that the structure of thin oxide film can be controlled by the initial Si surface preparation.

本文言語English
ページ(範囲)116-121
ページ数6
ジャーナルApplied Surface Science
162
DOI
出版ステータスPublished - 2000 8 1
イベント5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
継続期間: 1999 7 61999 7 9

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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