TY - JOUR
T1 - Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization
AU - Gotoh, H.
AU - Tawara, T.
AU - Kobayashi, Y.
AU - Kobayashi, N.
AU - Yamauchi, Y.
AU - Makimoto, T.
AU - Saitoh, T.
PY - 2006
Y1 - 2006
N2 - Piezoelectric effects on PL properties are clarified in InGaN quantum wells (QWs) of 1-10 nm wide at 17 K. An extremely large change in PL peak energy (up to 200 meV) and PL decay time (two orders of magnitude) are found in a 10 nm-wide QW with increasing excitation intensity. We compare the distinctive characteristics of the field effects with QCSE in GaAs QWs and discuss possible optical device functions.
AB - Piezoelectric effects on PL properties are clarified in InGaN quantum wells (QWs) of 1-10 nm wide at 17 K. An extremely large change in PL peak energy (up to 200 meV) and PL decay time (two orders of magnitude) are found in a 10 nm-wide QW with increasing excitation intensity. We compare the distinctive characteristics of the field effects with QCSE in GaAs QWs and discuss possible optical device functions.
UR - http://www.scopus.com/inward/record.url?scp=33746331044&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33746331044&partnerID=8YFLogxK
U2 - 10.1002/pssc.200565166
DO - 10.1002/pssc.200565166
M3 - Conference article
AN - SCOPUS:33746331044
VL - 3
SP - 1974
EP - 1977
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
T2 - 6th International Conference on Nitride Semiconductors, ICNS-6
Y2 - 28 August 2005 through 2 September 2005
ER -