抄録
Two types of ZnSe:Mn dc thin-film electroluminescent (EL) devices were prepared by molecular beam growth: a Au/ZnSe:Mn/GaAs cell with a single-crystal ZnSe:Mn host layer and an Al/ZnSe:Mn/ITO cell with a polycrystal ZnSe:Mn host layer. Modulation doping was used to investigate the active region in the ZnSe:Mn layer. It was found that threshold voltage characteristics of the Au/ZnSe:Mn/GaAs cell were influenced by the Mn doping position in the ZnSe host layer, but in the Al/ZnSe:Mn/ITO cell, there was no dependence of threshold voltage on the Mn doping position. The dependence of luminescence intensity-injection current characteristics on the Mn doping position showed that the excitation probability of Mn luminescence centers by injected electrons increased in the region close to the negative electrode for both types of EL cells.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 4706-4710 |
| ページ数 | 5 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 57 |
| 号 | 10 |
| DOI | |
| 出版ステータス | Published - 1985 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（全般）