MOLECULAR BEAM EPITAXIAL GROWTH OF GaAs.

S. Gonda*, Yuichi Matsushima, Y. Makita, S. Mukai

*この研究の対応する著者

研究成果: Chapter

抄録

Molecular beam epitaxy of GaAs was tried using a high vacuum system with effusion cells and a quadrupole mass spectrometer, and the epitaxial process was studied in situ by high energy electron diffraction. Analysis of the quality of the GaAs film was made with a scanning electron microscope, an ion microprobe analyser and an ESCA photoelectron spectrometer. Photoluminescence measurements were made to investigate the radiative recombination characteristics of the GaAs film. It is found from these measurements that the GaAs film grown by molecular beam epitaxy has nearly the same quality as bulk crystals.

本文言語English
ホスト出版物のタイトルBull Electrotech Lab, Tokyo
ページ361-369
ページ数9
39
5
出版ステータスPublished - 1975
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)

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