Molecular Beam Epitaxial Growth of GaP and GaAs1-xPx

Yuichi Matsushima, Shun ichi Gonda

研究成果: Article

抜粋

Epitaxial films of GaP and GaAs1-xPx were grown on (100)-oriented GaP substrates by molecular beam epitaxy. According to evaluation of crystallographic quality by RHEED and SEM, at the deposition rate of 15~30 A/min the deposited GaP and GaAs,_xPx were single crystalline at the substrate temperature, Ts, of 550≾Ts≾600≾ and 540≾Ts≾600 °, respectively. IMA and photoluminescence studies show the epitaxial films include few impurities and few defects. Composition ratio, x, of GaAsi-xPx is dependent both substrate temperature, Ts, and the intensity ratio of P to As molecules, and the rate of decrease of x with Ts,-dx/dTs, is 0.003°-1 for all the intensity ratio concerned (np/nAs = 2≾11). The sticking coefficient of P is found to vary inversely proportional to substrate temperature.

元の言語English
ページ(範囲)337-347
ページ数11
ジャーナルShinku/Journal of the Vacuum Society of Japan
19
発行部数10
DOI
出版物ステータスPublished - 1976
外部発表Yes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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