Molecular Beam Epitaxial Growth of GaP and GaAs1-xPx

Yuichi Matsushima, Shun ichi Gonda

研究成果: Article

抄録

Epitaxial films of GaP and GaAs1-xPx were grown on (100)-oriented GaP substrates by molecular beam epitaxy. According to evaluation of crystallographic quality by RHEED and SEM, at the deposition rate of 15~30 A/min the deposited GaP and GaAs,_xPx were single crystalline at the substrate temperature, Ts, of 550≾Ts≾600≾ and 540≾Ts≾600 °, respectively. IMA and photoluminescence studies show the epitaxial films include few impurities and few defects. Composition ratio, x, of GaAsi-xPx is dependent both substrate temperature, Ts, and the intensity ratio of P to As molecules, and the rate of decrease of x with Ts,-dx/dTs, is 0.003°-1 for all the intensity ratio concerned (np/nAs = 2≾11). The sticking coefficient of P is found to vary inversely proportional to substrate temperature.

元の言語English
ページ(範囲)337-347
ページ数11
ジャーナルShinku/Journal of the Vacuum Society of Japan
19
発行部数10
DOI
出版物ステータスPublished - 1976
外部発表Yes

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Molecular beams
Epitaxial growth
molecular beams
Epitaxial films
Substrates
Reflection high energy electron diffraction
Deposition rates
Molecular beam epitaxy
Temperature
temperature
Photoluminescence
molecular beam epitaxy
Impurities
Crystalline materials
photoluminescence
impurities
Defects
Scanning electron microscopy
scanning electron microscopy
Molecules

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

これを引用

Molecular Beam Epitaxial Growth of GaP and GaAs1-xPx. / Matsushima, Yuichi; Gonda, Shun ichi.

:: Shinku/Journal of the Vacuum Society of Japan, 巻 19, 番号 10, 1976, p. 337-347.

研究成果: Article

Matsushima, Yuichi ; Gonda, Shun ichi. / Molecular Beam Epitaxial Growth of GaP and GaAs1-xPx. :: Shinku/Journal of the Vacuum Society of Japan. 1976 ; 巻 19, 番号 10. pp. 337-347.
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