MOLECULAR BEAM EPITAXIAL GROWTH OF InAs.

Mitsuaki Yano, Masaharu Nogami, Yuichi Matsushima, Morihiko Kimata

    研究成果: Chapter

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    Thin crystalline films of InAs have been heteroepitaxially grown on (100) surface of GaAs by molecular beam epitaxy. The films are evaluated by optical microscope, SEM, RHEED and electrical measurements. In spite of the existence of a large lattice mismatch between InAs and GaAs, specular InAs films are obtained. Undoped InAs films show the n-type conduction, and their electron concentrations and mobilities are varied depending on the substrate temperature (T//s) during growth. At T//s equals 480 C, single crystalline films with high crystallographic quality and flat surfaces are grown. Furthermore, Mg atoms are successfully doped into InAs during the MBE growth to obtain p-type films.

    元の言語English
    ホスト出版物のタイトルJpn J Appl Phys
    ページ2131-2137
    ページ数7
    16
    エディション12
    出版物ステータスPublished - 1977 12

    ASJC Scopus subject areas

    • Engineering(all)

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    Yano, M., Nogami, M., Matsushima, Y., & Kimata, M. (1977). MOLECULAR BEAM EPITAXIAL GROWTH OF InAs.Jpn J Appl Phys (12 版, 巻 16, pp. 2131-2137)