Thin crystalline films of InAs have been heteroepitaxially grown on (100) surface of GaAs by molecular beam epitaxy. The films are evaluated by optical microscope, SEM, RHEED and electrical measurements. In spite of the existence of a large lattice mismatch between InAs and GaAs, specular InAs films are obtained. Undoped InAs films show the n-type conduction, and their electron concentrations and mobilities are varied depending on the substrate temperature (T//s) during growth. At T//s equals 480 C, single crystalline films with high crystallographic quality and flat surfaces are grown. Furthermore, Mg atoms are successfully doped into InAs during the MBE growth to obtain p-type films.
|ホスト出版物のタイトル||Jpn J Appl Phys|
|出版物ステータス||Published - 1977 12|
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